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FDS86141 データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDS86141 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page www.fairchildsemi.com 4 © 2007 Fairchild Semiconductor Corporation FDS86141 • Rev. C4 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain-to-Source Voltage Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature Figure 11. Forward Bias Safe Operating Area Figure 12. Single-Pulse Maximum Power Dissipation Typical Characteristics T J = 25 °C unless otherwise noted. 0 3 6 9 12 15 0 2 4 6 8 10 ID = 7 A VDD = 50 V VDD = 25 V Qg, GATE CHARGE (nC) VDD = 75 V 0.1 1 10 100 5 10 100 1000 f = 1 MHz VGS = 0 V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 0.01 0.1 1 10 50 1 10 20 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) 25 50 75 100 125 150 0 2 4 6 8 VGS = 6 V RJA = 50 o C/W VGS = 10 V T A , AMBIENT TEMPERATURE ( o C ) 0.01 0.1 1 10 100 600 0.01 0.1 1 10 100 10 s 100us 10 ms DC 1 s 100 ms 1 ms VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC 10 -3 10 -2 10 -1 110 100 1000 0.5 1 10 100 500 SINGLE PULSE RJA = 125 oC/W TA = 25 oC t, PULSE WIDTH (sec) |
同様の部品番号 - FDS86141 |
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同様の説明 - FDS86141 |
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