©2009 Fairchild Semiconductor International

Rev. A1 January 2009

FQD19N10 / FQU19N10

100V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

Features

• Low gate charge ( typical 19 nC)

• Low Crss ( typical 32 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

Symbol

Parameter

FQD19N10 / FQU19N10

Units

Drain-Source Voltage

100

V

Drain Current

15.6

A

9.8

A

Drain Current

- Pulsed

(Note 1)

62.4

A

Gate-Source Voltage

± 25

V

Single Pulsed Avalanche Energy

(Note 2)

220

mJ

Avalanche Current

(Note 1)

15.6

A

Repetitive Avalanche Energy

(Note 1)

5.0

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

6.0

V/ns

2.5

W

50

W

- Derate above 25°C

0.4

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

2.5

°C/W

Thermal Resistance, Junction-to-Ambient *

--

50

°C/W

Thermal Resistance, Junction-to-Ambient

--

110

°C/W

* When mounted on the minimum pad size recommended (PCB Mount)

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S

D

G

I-PAK

FQU Series

D-PAK

FQD Series

G

S

D

G

S

D

Compliant

January 2009

QFET

®