2N2324 datasheet(2/3 Pages) COMSET

部品番号	2N2324

部品情報	SILICON THYRISTORS

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2 / 3 page

2n2322 to 2n2326

12/11/2012

COMSET SEMICONDUCTORS

2 | 3

ELECTRICAL CHARACTERISTICS (*)

TJ=25°C unless otherwise noted, RGK=1000Ω

Symbol

Ratings

2N2322 2N2323 2N2324 2N2325 2N2326 Unit

VDRM

Peak Forward Blocking

Voltage (1)

Min :

25

50

100

150

200

V

IRRM

Peak Reverse Blocking

Current

(Rated VDRM, TJ =125°C)

Max : 100

µA

IDRM

Peak Forward Blocking

Current

(Rated VDRM, TJ =125°C)

Max : 100

µA

VTM

Forward « on » Voltage

ITM=1.0 A Peak

Max : 1.5

V

ITM =3.14 A Peak

TC =85°C

Max : 2.0

IGT

Gate Trigger Current (2)

Anode Voltage=6.0 Vdc

RL=100Ω

Max : 200

µA

Anode Voltage=6.0 Vdc

RL=100Ω, TC=-65°C

Max : 350

VGT

Gate Trigger Voltage

Anode Voltage=6.0 V

RL=100Ω

Max : 0.8

V

Anode Voltage=6.0 V

RL=100Ω, TC=-65°C

Max : 1.0

VDRM = Rated

RL=100Ω, TJ=125°C

Min : 0.1

IH

Holding Current

Anode Voltage=6.0 V

Max : 2.0

mA

Anode Voltage=6.0 V

TC=-65°C

Max : 3.0

Anode Voltage=6.0 V

TC=125°C

Min : 0.15

(*) JEDEC Registered Values

(1) VRSM and VDRM can be applied for all types on a continuous dc basis without incurring

damage.

(2) RGK current is not included in measurement.

同様の部品番号 - 2N2324

メーカー	部品番号	データシート	部品情報
Microsemi Corporation	2N2324	67Kb / 2P	SILICON CONTROLLED RECTIFIER
Central Semiconductor C...	2N2324	138Kb / 2P	SILICON CONTROLLED RECTIFIER 1.6 AMPS, 25 THRU 400 VOLTS
New Jersey Semi-Conduct...	2N2324	85Kb / 1P	SCR, V(DRM) = 100 V TO 199.9 V
Digitron Semiconductors	2N2324	397Kb / 3P	SILICON CONTROLLED RECTIFIERS
Central Semiconductor C...	2N2324	138Kb / 2P	SILICON CONTROLLED RECTIFIER

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同様の説明 - 2N2324

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Comset Semiconductor	2N2327	80Kb / 3P	SILICON THYRISTORS
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ON Semiconductor	2N6344	87Kb / 8P	Silicon Bidirectional Thyristors March, 2000 ??Rev. 1
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