データシートサーチシステム |
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TIP121 データシート(PDF) 1 Page - Comset Semiconductor |
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TIP121 データシート(HTML) 1 Page - Comset Semiconductor |
1 / 3 page NPN TIP120-121-122 05/10/2012 COMSET SEMICONDUCTORS 1 | 3 SEMICONDUCTORS SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for use in power linear and switching applications. PNP complements are TIP125-126-127 Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCBO Collector-Base Voltage TIP120 60 V TIP121 80 TIP122 100 VCEO Collector-Emitter Voltage TIP120 60 V TIP121 80 TIP122 100 VEBO Emitter-Base Voltage TIP120 5 V TIP121 TIP122 IC Collector Current TIP120 5 A TIP121 TIP122 ICM Collector Peak Current TIP120 8 A TIP121 TIP122 IB Base Current TIP120 120 mA TIP121 TIP122 PT Power Dissipation @ Tc < 25° TIP120 65 Watts TIP121 TIP122 @ Ta < 25° TIP120 2 TIP121 TIP122 TJ Junction Temperature TIP120 150 °C TIP121 TIP122 Ts Storage Temperature range TIP120 -65 to +150 TIP121 TIP122 |
同様の部品番号 - TIP121 |
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同様の説明 - TIP121 |
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