データシートサーチシステム |
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BTB12-600 データシート(PDF) 1 Page - Apollo Electron Co., Ltd. |
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BTB12-600 データシート(HTML) 1 Page - Apollo Electron Co., Ltd. |
1 / 6 page 1 2 3 Absolute Maximum Ratings ( Tj = 25°C unless otherwise specified ) Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off-State Voltage Sine wave, 50 to 60 Hz 800 V IT(RMS) R.M.S On-State Current Tj = 125 °C, Full Sine wave 12 A ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 120/126 A I2t I2t tp = 10ms 72 A2s PG(AV) Average Gate Power Dissipation Tj=125°C 1 W IGM Peak Gate Current Tj=125°C 2 A TJ Operating Junction Temperature - 40 ~ 125 °C TSTG Storage Temperature - 40 ~ 150 °C July, 2010. Rev.2 1/6 TF12A80 Standard Triac IT(RMS) = 12 A ITSM = 126A VDRM = 800V TO-220F copyright @ Apollo Electron Co., Ltd. All rights reserved. 2.T2 3.Gate 1.T1 Symbol ○ ○ ○ ▼▲ Features ◆ Repetitive Peak Off-State Voltage : 800V ◆ R.M.S On-State Current ( IT(RMS)= 1 A ) ◆ High Commutation dv/dt General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay where high sensi- tivity is required in all four quadrants. rrent ( IT(RMS)= 1 A ) This device may substitute for BTA12-600, BTB12-600, BT138-600, BCR12CM12L, TM1261M/S series. |
同様の部品番号 - BTB12-600 |
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同様の説明 - BTB12-600 |
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