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2SJ661 データシート(PDF) 2 Page - Sanyo Semicon Device

部品番号 2SJ661
部品情報  General-Purpose Switching Device Applications
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メーカー  SANYO [Sanyo Semicon Device]
ホームページ  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SJ661 データシート(HTML) 2 Page - Sanyo Semicon Device

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2SJ661
No.8586-2/9
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
250
mJ
Avalanche Current *2
IAV
--38
A
Note :
*1 VDD=--30V, L=200μH, IAV=--38A (Fig.1)
*2 L≤200μH, single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
| yfs |
VDS=--10V, ID=--19A
18
31
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--19A, VGS=--10V
29.5
39
RDS(on)2
ID=--19A, VGS=--4V
40
56
Input Capacitance
Ciss
VDS=--20V, f=1MHz
4360
pF
Output Capacitance
Coss
470
pF
Reverse Transfer Capacitance
Crss
335
pF
Turn-ON Delay Time
td(on)
See Fig.2
33
ns
Rise Time
tr
285
ns
Turn-OFF Delay Time
td(off)
295
ns
Fall Time
tf
195
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--38A
80
nC
Gate-to-Source Charge
Qgs
15
nC
Gate-to-Drain “Miller” Charge
Qgd
12
nC
Diode Forward Voltage
VSD
IS=--38A, VGS=0V
--1.0
--1.2
V
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
Ordering Information
Device
Package
Shipping
memo
2SJ661-1E
TO-262-3L
50pcs./magazine
Pb Free
2SJ661-DL-1E
TO-263-2L
800pcs./reel
≥50Ω
50Ω
RG
0V
--10V
VDD
L
2SJ661
D.C.≤1%
PW=10μs
P.G
50Ω
G
S
D
ID= --19A
RL=1.58Ω
VDD= --30V
VOUT
2SJ661
VIN
0V
--10V
VIN


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