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STK760-216-E データシート(PDF) 2 Page - Sanyo Semicon Device |
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STK760-216-E データシート(HTML) 2 Page - Sanyo Semicon Device |
2 / 11 page STK760-216-E No.A1793-2/11 Specifications Absolute Maximum Ratings at Ta = 25 °C Parameter Symbol Conditions Ratings unit Collector-emitter voltage VCE 600 V Repetitive peak collector current ICP *1 300 A Collector current IC 148 A IGBT (TR1+TR2) Power dissipation PC1 223 W Diode reverse voltage VRM 600 V Repetitive peak forward current IF1P *1 220 A Diode forward current IF1 73 A FRD1 (D1) Power dissipation PD1 150 W Repetitive peak forward current IF2P *1 15 A Diode forward current IF2 7 A FRD2 (D2) Power dissipation PD2 13 W Supply voltage (VCC-GND) VCC 20 V Pin 1 VBOP -0.3 to 9.0 Pin 7 VIS -10 to 0.3 Pin 8 VCOMP Pin 12 VFB Pin 13 VOVP -0.3 to 6.5 Pin 4 VONF Signal pin input voltage Pin 10 Vctl -0.3 to VCC V Maximum input AC voltage VAC Single-phase Full-rectified 264 V Maximum output voltage VO 450 V Maximum output power Wo 8kW Input AC current (normal condition) IIN Under the Application condition (VAC=200V) 40 Arms Junction temperature Tj 150 °C Operating case temperature Tc HIC case temperature *2 -20 to +100 °C Storage temperature Tstg -40 to +125 °C Tightening torque A screw part *3 1.17 N•m Withstand voltage VINS 50Hz sine wave AC 1minute *4 2000 VRMS [Note] *1: Duty ratio D = 0.1, tp = 1ms *2: Measure point is between 5mm to center of back. *3: Torque should be set within 0.79 to 1.17N ⋅m. Flatness of the heat-sink should be lower than 0.2mm. *4: The test condition: AC2500V, 1 second. |
同様の部品番号 - STK760-216-E |
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同様の説明 - STK760-216-E |
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