TC1606N

REV4_20070502

Phone: 886-6-5050086

Fax: 886-6-5051602

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°°°°C)

Symbol

Parameter

Rating

Drain-Source Voltage

12.0 V

Gate-Source Voltage

-5.0 V

Drain Current

RF Input Power, CW

30 dBm

Continuous Dissipation

7.7 W

Channel Temperature

175

°C

Storage Temperature

- 65

CHIP DIMENSIONS

Units: Micrometers

Gate Pad: 76.0 x 59.5

Chip Thickness: 50

Drain Pad: 86.0 x 76.0

CHIP HANDLING

DIE ATTACHMENT: Conductive epoxy or eutectic die attach is recommended. Eutectic die attach can be

accomplished with Au-Sn (80%Au-20%Sn) perform at stage temperature: 290

°C ± 5°C; Handling Tool: Tweezers;

Time: less than 1min.

WIRE BONDING: The recommended wire bond method is thermocompression bonding with 0.7 to 1.0 mil

(0.018 to 0.025 mm) gold wire. Stage temperature: 220

°C to 250°C; Bond Tip Temperature: 150°C; Bond Force:

20 to 30 gms depending on size of wire and Bond Tip Temperature.

HANDLING PRECAUTIONS: The user must operate in a clean, dry environment. Care should be exercised

during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all

stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.

G

G

D

D

G

G

D

D

S

S

S

S

S