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AD261BND-4 データシート(PDF) 3 Page - Analog Devices |
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AD261BND-4 データシート(HTML) 3 Page - Analog Devices |
3 / 6 page AD261 –3– REV. 0 WARNING! ESD SENSITIVE DEVICE CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD261 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ABSOLUTE MAXIMUM RATINGS* Parameter Conditions Min Typ Max Units Supply Voltage (+5 V dcSYS & FLD) –0.5 +6.0 V DC Input Voltage (VIN MAX) Referred to +5 V dcSYS & FLD and 5 V RTNSYS & FLD Respectively –0.5 +0.5 V DC Output Voltage (VOUT MAX) Referred to +5 V RTNSYS & FLD and 5 V dcSYS & FLD Respectively –0.5 +0.5 V Clamp Diode Input Current (IIK) For VI < –0.5 V or VI > 5 V RTNSYS & FLD +0.5 V –25 +25 mA Clamp Diode Output Current (IOK) For VO < –0.5 V or VO > 5 V RTNSYS & FLD +0.5 V –25 +25 mA Output DC Current, per Pin (IOUT) –25 +25 mA DC Current, VCC or GND (ICC or IGND) –50 +50 mA Storage Temperature (TSTG) –40 +85 °C Lead Temperature (Soldering, 10 sec) +300 °C Electrostatic Protection (VESD) Per MIL-STD-883, Method 3015 4.5 5 kV *Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum ratings for extended periods may effect device reliability. I/O CONFIGURATIONS AVAILABLE The AD261 is available in several configurations. The choice of model is determined by the desired number of input vs. output lines. All models have identical footprints with the power and enable pins always being in the same locations. PIN CONFIGURATION 15 16 17 18 19 20 21 22 1 2 3 4 5 6 7 8 SYSTEM FIELD BOTTOM VIEW S0 S1 S2 S3 S4 ENABLESYS +5V dcSYS 5V RTNSYS 5V RTNFLD +5V dcFLD ENABLEFLD F0 F1 F2 F3 F4 ORDERING GUIDE Model Isolation Package Package Number Description Ratings Description Option AD261AND-0 0 Inputs, 5 Outputs 1.75 kV rms Plastic DIP ND-22A AD261AND-1 1 Input, 4 Outputs 1.75 kV rms Plastic DIP ND-22A AD261AND-2 2 Inputs, 3 Outputs 1.75 kV rms Plastic DIP ND-22A AD261AND-3 3 Inputs, 2 Outputs 1.75 kV rms Plastic DIP ND-22A AD261AND-4 4 Inputs, 1 Output 1.75 kV rms Plastic DIP ND-22A AD261AND-5 5 Inputs, 0 Outputs 1.75 kV rms Plastic DIP ND-22A AD261BND-0 0 Inputs, 5 Outputs 3.5 kV rms Plastic DIP ND-22A AD261BND-1 1 Input, 4 Outputs 3.5 kV rms Plastic DIP ND-22A AD261BND-2 2 Inputs, 3 Outputs 3.5 kV rms Plastic DIP ND-22A AD261BND-3 3 Inputs, 2 Outputs 3.5 kV rms Plastic DIP ND-22A AD261BND-4 4 Inputs, 1 Output 3.5 kV rms Plastic DIP ND-22A AD261BND-5 5 Inputs, 0 Outputs 3.5 kV rms Plastic DIP ND-22A PIN FUNCTION DESCRIPTIONS Pin Mnemonic Function 1–5* S0 Through S4 Digital Xmt or Rcv from F0 Through F4 6 ENABLESYS System Output Enable /Three-State 7 +5 V dcSYS System Power Supply (+5 V dc Input) 8 5 V RTNSYS System Power Supply Common 9–14 Not Present On Unit 15 5 V RTNFLD Field Power Supply Common 16 +5 V dcFLD Field Power Supply (+5 V Input) 17 ENABLEFLD Field Output Enable/ Three-State 18–22* F0 Through F4 Digital Xmt or Rcv from S0 Through S4 *Function of pin determined by model. Refer to Table I. |
同様の部品番号 - AD261BND-4 |
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同様の説明 - AD261BND-4 |
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