データシートサーチシステム |
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FDD8424H_F085A データシート(PDF) 5 Page - Fairchild Semiconductor |
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FDD8424H_F085A データシート(HTML) 5 Page - Fairchild Semiconductor |
5 / 11 page 5 Figure 7. 0 4 8 12 16 0 2 4 6 8 10 ID = 9A VDD = 25V VDD = 20V VDD = 15V Qg, GATE CHARGE(nC) Gate Charge Characteristics Figure8. 0.1 1 10 100 1000 2000 30 f = 1MHz VGS = 0V VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss 40 Capacitance vs Drain to Source Voltage Figure9. 0.001 0.01 0.1 1 10 100 1 10 TJ = 125oC TJ = 25oC tAV, TIME IN AVALANCHE(ms) 30 Unclamped Inductive Switching Capability Figure10.Maximum Continuous Drain Current vs CaseTemperature 25 50 75 100 125 150 0 5 10 15 20 25 30 Limited by Package RθJC = 4.1oC/W VGS = 4.5V VGS = 10V TC, CASE TEMPERATURE ( oC) Figure 11. Forward BiasSafe Operating Area 110 0.1 1 10 100 10us DC 10ms 1ms 100us SINGLE PULSE TJ = MAX RATED RθJC = 4.1 oC/W TC = 25oC THIS AREA IS LIMITED BY rDS(on) VDS, DRAIN to SOURCE VOLTAGE (V) 80 Figure12. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 VGS = 10V SINGLE PULSE RθJC = 4.1 oC/W t, PULSE WIDTH (s) I = I25 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 150 TC – 125 ------------------------ TC = 25oC Single Pulse Maximum Power Dissipation Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted ©2013 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.C1 www.fairchildsemi.com |
同様の部品番号 - FDD8424H_F085A_13 |
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同様の説明 - FDD8424H_F085A_13 |
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