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ADF4111BRU データシート(PDF) 4 Page - Analog Devices |
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ADF4111BRU データシート(HTML) 4 Page - Analog Devices |
4 / 24 page REV. 0 ADF4110/ADF4111/ADF4112/ADF4113 –4– CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumu- late on the human body and test equipment and can discharge without detection. Although the ADF4110/ADF4111/ADF4112/ADF4113 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. WARNING! ESD SENSITIVE DEVICE ABSOLUTE MAXIMUM RATINGS 1, 2 (TA = 25 °C unless otherwise noted) AVDD to GND 3 . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V AVDD to DVDD . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V VP to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V VP to AVDD . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +5.5 V Digital I/O Voltage to GND . . . . . . . . –0.3 V to VDD + 0.3 V Analog I/O Voltage to GND . . . . . . . . . –0.3 V to VP + 0.3 V REFIN, RFINA, RFINB to GND . . . . . . –0.3 V to VDD + 0.3 V Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . –40 °C to +85°C Storage Temperature Range . . . . . . . . . . . . –65 °C to +150°C Maximum Junction Temperature . . . . . . . . . . . . . . . . 150 °C TSSOP θJA Thermal Impedance . . . . . . . . . . . . . 150.4°C/W CSP θJA Thermal Impedance (Paddle Soldered) . . . 122°C/W CSP θJA Thermal Impedance (Paddle Not Soldered) . . . . . . . . . . . . . . . . . . . . . 216 °C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215 °C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220 °C NOTES 1Stresses above those listed under Absolute Maximum Ratings may cause perma- nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2This device is a high-performance RF integrated circuit with an ESD rating of < 2 kV and it is ESD sensitive. Proper precautions should be taken for handling and assembly. 3 GND = AGND = DGND = 0 V. TRANSISTOR COUNT 6425 (CMOS) and 303 (Bipolar). ORDERING GUIDE Model Temperature Range Package Description Package Option * ADF4110BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-16 ADF4110BCP –40 °C to +85°C Chip Scale Package (CSP) CP-20 ADF4111BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-16 ADF4111BCP –40 °C to +85°C Chip Scale Package (CSP) CP-20 ADF4112BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-16 ADF4112BCP –40 °C to +85°C Chip Scale Package (CSP) CP-20 ADF4113BRU –40 °C to +85°C Thin Shrink Small Outline Package (TSSOP) RU-16 ADF4113BCP –40 °C to +85°C Chip Scale Package (CSP) CP-20 ADF4113BCHIPS –40 °C to +85°C DICE DICE *Contact the factory for chip availability. CLOCK DATA LE LE DB20 (MSB) DB19 DB2 DB1 (CONTROL BIT C2) DB0 (LSB) (CONTROL BIT C1) t6 t5 t1 t2 t3 t4 Figure 1. Timing Diagram |
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同様の説明 - ADF4111BRU |
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