データシートサーチシステム |
|
ADM1025AARQ データシート(PDF) 10 Page - Analog Devices |
|
ADM1025AARQ データシート(HTML) 10 Page - Analog Devices |
10 / 16 page REV. A ADM1025/ADM1025A –10– TEMPERATURE MEASUREMENT SYSTEM Internal Temperature Measurement The ADM1025/ADM1025A contains an on-chip bandgap tem- perature sensor, whose output is digitized by the on-chip ADC. The temperature data is stored in the Local Temperature Value Register (address 27h). As both positive and negative tempera- tures can be measured, the temperature data is stored in two’s complement format, as shown in Table III. Theoretically, the temperature sensor and ADC can measure temperatures from –128 °C to +127°C with a resolution of 1°C, although tempera- tures below 0 °C and above 100°C are outside the operating temperature range of the device. External Temperature Measurement The ADM1025/ADM1025A can measure temperature using an external diode sensor or diode-connected transistor, connected to Pins 9 and 10. The forward voltage of a diode or diode-connected transistor, operated at a constant current, exhibits a negative temperature coefficient of about –2 mV/ °C. Unfortunately, the absolute value of VBE, varies from device to device, and individual calibra- tion is required to null this out, so the technique is unsuitable for mass production. The technique used in the ADM1025/ADM1025A is to measure the change in VBE when the device is operated at two differ- ent currents. This is given by: ∆VBE = KT/q × ln(N) where: K is Boltzmann’s constant q is charge on the carrier T is absolute temperature in Kelvins N is ratio of the two currents Figure 11 shows the input signal conditioning used to measure the output of an external temperature sensor. This figure shows the external sensor as a substrate transistor, provided for tem- perature monitoring on some microprocessors, but it could equally well be a discrete transistor. If a discrete transistor is used, the collector will not be grounded, and should be linked to the base. If a PNP transistor is used, the base is connected to the D– input and the emitter to the D+ input. If an NPN transistor is used, the emitter is connected to the D– input and the base to the D+ input. Bit 6 of Status Register 2 (42h) is set if a remote diode fault is detected. The ADM1025/ADM1025A detects shorts from D+ to GND or supply, as well as shorts/opens between D+/D–. LOW-PASS FILTER fC = 65kHz BIAS DIODE REMOTE SENSING TRANSISTOR IN IIBIAS D+ D– VOUT+ VOUT– TO ADC VDD Figure 11. Signal Conditioning for External Diode Temperature Sensors Table III. Temperature Data Format Temperature Digital Output –128 °C 1000 0000 –125 °C 1000 0011 –100 °C 1001 1100 –75 °C 1011 0101 –50 °C 1100 1110 –25 °C 1110 0111 0 °C 0000 0000 +10 °C 0000 1010 +25 °C 0001 1001 +50 °C 0011 0010 +75 °C 0100 1011 +100 °C 0110 0100 +125 °C 0111 1101 +127 °C 0111 1111 To prevent ground noise interfering with the measurement, the more negative terminal of the sensor is not referenced to ground, but is biased above ground by an internal diode at the D– input. If the sensor is used in a very noisy environment, a capacitor of value up to 1 nF may be placed between the D+ and D– inputs to filter the noise. To measure ∆V BE, the sensor is switched between operating currents of I and N × I. The resulting waveform is passed through a 65 kHz low-pass filter to remove noise, then to a chopper- stabilized amplifier that performs the functions of amplification and rectification of the waveform to produce a dc voltage pro- portional to ∆VBE. This voltage is measured by the ADC to give a temperature output in 8-bit two’s complement format. To further reduce the effects of noise, digital filtering is performed by averaging the results of sixteen measurement cycles. An external temperature measurement takes nominally 34.8 ms. LAYOUT CONSIDERATIONS Digital boards can be electrically noisy environments and care must be taken to protect the analog inputs from noise, particu- larly when measuring the very small voltages from a remote diode sensor. The following precautions should be taken: 1. Place the ADM1025/ADM1025A as close as possible to the remote sensing diode. Provided that the worst noise sources such as clock generators, data/address buses and CRTs are avoided, this distance can be four to eight inches. 2. Route the D+ and D– tracks close together, in parallel, with grounded guard tracks on each side. Provide a ground plane under the tracks if possible. 3. Use wide tracks to minimize inductance and reduce noise pickup. 10 mil track minimum width and spacing is recommended. 10MIL 10MIL 10MIL 10MIL 10MIL 10MIL 10MIL GND D+ D– GND Figure 12. Arrangement of Signal Tracks |
同様の部品番号 - ADM1025AARQ |
|
同様の説明 - ADM1025AARQ |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |