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CSD17552Q3A データシート(PDF) 5 Page - Texas Instruments

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部品番号 CSD17552Q3A
部品情報  30V, N-Channel NexFET Power MOSFETs
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メーカー  TI [Texas Instruments]
ホームページ  http://www.ti.com
Logo TI - Texas Instruments

CSD17552Q3A データシート(HTML) 5 Page - Texas Instruments

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background image
0.0
20.0
40.0
60.0
80.0
100.0
120.0
140.0
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
Silicon limited
Package limited
G001
0.01
0.1
1
10
100
1000
5000
0.01
0.1
1
10
50
VDS - Drain-to-Source Voltage (V)
1ms
10ms
100ms
1s
DC
Single Pulse
Typical RthetaJA =146ºC/W(min Cu)
G001
1
10
80
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
ID =11A
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
CSD17552Q3A
www.ti.com
SLPS387 – SEPTEMBER 2012
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 9. Normalized On-State Resistance vs. Temperature
Figure 10. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
Figure 11. Maximum Safe Operating Area
Figure 12. Single Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
Figure 13. Maximum Drain Current vs. Temperature
Copyright © 2012, Texas Instruments Incorporated
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