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CSD18532KCS データシート(PDF) 2 Page - Texas Instruments |
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CSD18532KCS データシート(HTML) 2 Page - Texas Instruments |
2 / 10 page CSD18532KCS SLPS361A – AUGUST 2012 – REVISED OCTOBER 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics BVDSS Drain to Source Voltage VGS = 0V, ID = 250μA 60 V IDSS Drain to Source Leakage Current VGS = 0V, VDS = 48V 1 μA IGSS Gate to Source Leakage Current VDS = 0V, VGS = 20V 100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250μA 1.5 1.8 2.2 V VGS = 4.5V, ID = 100A 4.2 5.3 m Ω RDS(on) Drain to Source On Resistance VGS = 10V, ID = 100A 3.3 4.2 m Ω gfs Transconductance VDS = 30V, ID = 100A 187 S Dynamic Characteristics Ciss Input Capacitance 3900 4680 pF Coss Output Capacitance VGS = 0V, VDS = 30V, f = 1MHz 470 564 pF Crss Reverse Transfer Capacitance 11 14 pF RG Series Gate Resistance 1.3 2.6 Ω Qg Gate Charge Total (4.5V) 21 25 nC Qg Gate Charge Total (10V) 44 53 nC Qgd Gate Charge Gate to Drain VDS = 30V, ID = 100A 6.9 nC Qgs Gate Charge Gate to Source 10 nC Qg(th) Gate Charge at Vth 7.3 nC Qoss Output Charge VDS = 30V, VGS = 0V 52 nC td(on) Turn On Delay Time 7.8 ns tr Rise Time 5.3 ns VDS = 30V, VGS = 10V, IDS = 100A, RG = 0Ω td(off) Turn Off Delay Time 24.2 ns tf Fall Time 5.6 ns Diode Characteristics VSD Diode Forward Voltage ISD = 100A, VGS = 0V 0.8 1 V Qrr Reverse Recovery Charge 127 nC VDS= 30V, IF = 100A, di/dt = 300A/ μs trr Reverse Recovery Time 57 ns THERMAL CHARACTERISTICS (TA = 25°C unless otherwise stated) PARAMETER MIN TYP MAX UNIT RθJC Thermal Resistance Junction to Case 0.6 °C/W RθJA Thermal Resistance Junction to Ambient 62 °C/W 2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: CSD18532KCS |
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同様の説明 - CSD18532KCS |
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