データシートサーチシステム |
|
SI7655DN データシート(PDF) 2 Page - Vishay Siliconix |
|
SI7655DN データシート(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com 2 Document Number: 63617 S12-2393-Rev. B, 15-Oct-12 Vishay Siliconix Si7655DN New Product This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com Notes: a.Surface mounted on 1" x 1" FR4 board. b.Maximum under steady state conditions is 63 °C/W. Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, b t 10 s RthJA 21 26 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 1.7 2.2 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient V DS/TJ ID = - 250 µA - 12 mV/ °C VGS(th) Temperature Coefficient V GS(th)/TJ 2.6 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.5 - 1.1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 10 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 20 A 0.0030 0.0036 VGS = - 4.5 V, ID = - 15 A 0.0039 0.0048 VGS = - 2.5 V, ID = - 10 A 0.0062 0.0085 Forward Transconductancea gfs VDS = - 15 V, ID = - 20 A 90 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 6600 pF Output Capacitance Coss 890 Reverse Transfer Capacitance Crss 930 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 20 A 150 225 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A 72 110 Gate-Source Charge Qgs 12 Gate-Drain Charge Qgd 19 Gate Resistance Rg f = 1 MHz 0.5 2.6 5.2 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 4.5 V, Rg = 1 45 90 ns Rise Time tr 45 90 Turn-Off DelayTime td(off) 100 200 Fall Time tf 35 70 Turn-On Delay Time td(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 13 25 Rise Time tr 10 20 Turn-Off DelayTime td(off) 110 220 Fall Time tf 25 50 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 40c A Pulse Diode Forward Currenta ISM - 100 Body Diode Voltage VSD IF = - 10 A - 0.75 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 30 60 ns Body Diode Reverse Recovery Charge Qrr 17 26 nC Reverse Recovery Fall Time ta 15 ns Reverse Recovery Rise Time tb 15 |
同様の部品番号 - SI7655DN |
|
同様の説明 - SI7655DN |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |