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SI7655DN データシート(PDF) 2 Page - Vishay Siliconix

部品番号 SI7655DN
部品情報  P-Channel 20 V (D-S) MOSFET
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メーカー  VISHAY [Vishay Siliconix]
ホームページ  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7655DN データシート(HTML) 2 Page - Vishay Siliconix

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Document Number: 63617
S12-2393-Rev. B, 15-Oct-12
Vishay Siliconix
Si7655DN
New Product
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
Notes:
a.Surface mounted on 1" x 1" FR4 board.
b.Maximum under steady state conditions is 63 °C/W.
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, b
t
10 s
RthJA
21
26
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.7
2.2
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
V
DS/TJ
ID = - 250 µA
- 12
mV/
°C
VGS(th) Temperature Coefficient
V
GS(th)/TJ
2.6
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.5
- 1.1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS  - 5 V, VGS = - 10 V
- 20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 20 A
0.0030
0.0036
VGS = - 4.5 V, ID = - 15 A
0.0039
0.0048
VGS = - 2.5 V, ID = - 10 A
0.0062
0.0085
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 20 A
90
S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
6600
pF
Output Capacitance
Coss
890
Reverse Transfer Capacitance
Crss
930
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 20 A
150
225
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A
72
110
Gate-Source Charge
Qgs
12
Gate-Drain Charge
Qgd
19
Gate Resistance
Rg
f = 1 MHz
0.5
2.6
5.2
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
45
90
ns
Rise Time
tr
45
90
Turn-Off DelayTime
td(off)
100
200
Fall Time
tf
35
70
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
13
25
Rise Time
tr
10
20
Turn-Off DelayTime
td(off)
110
220
Fall Time
tf
25
50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 40c
A
Pulse Diode Forward Currenta
ISM
- 100
Body Diode Voltage
VSD
IF = - 10 A
- 0.75
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
30
60
ns
Body Diode Reverse Recovery Charge
Qrr
17
26
nC
Reverse Recovery Fall Time
ta
15
ns
Reverse Recovery Rise Time
tb
15


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