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AMS2026S データシート(PDF) 2 Page - Advanced Monolithic Systems

部品番号 AMS2026S
部品情報  DUAL POWER DISTRIBUTION SWITCH
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メーカー  ADMOS [Advanced Monolithic Systems]
ホームページ  http://www.advanced-monolithic.com
Logo ADMOS - Advanced Monolithic Systems

AMS2026S データシート(HTML) 2 Page - Advanced Monolithic Systems

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Advanced Monolithic Systems, Inc.
6680B Sierra Lane, Dublin, CA 94568 Phone (925) 556-9090 Fax (925) 556-9140
AMS2026
ABSOLUTE MAXIMUM RATINGS (Note 1)
Input Voltage Range, VI
-0.3V to 7V
Internal Power Dissipation
(Note 3)
Output Voltage Range, VO
-0.3V to VI(IN) +0.3V
Maximum Junction Temperature
+125
°C
Input Voltage Range, VI at /EN
-0.3V to 7V
Storage Temperature
-65
°C to +150°C
Continuos Output Current, IO
Internally Limited
Lead Temperature (Soldering 10 sec)
260
°C
ELECTRICAL CHARACTERISTICS
Electrical Characteristics for each section at TJ=25°C, VI(IN) = 5.5V, IO =rated current, /EN = 0V unless otherwise specified.
PARAMETER
CONDITIONS
(Note 2)
Min.
AMS2026
Typ.
Max.
Units
Switch On-State Resistance
VI(IN) = 5.5V
110
140
m
VI(IN) = 5.0V
110
140
m
VI(IN) = 4.5V
110
140
m
VI(IN) = 4.0V
110
140
m
Switch Output Leakage Current
/EN = VI
0.01
5
µA
/EN = VI , -40
°C ≤ T
J
≤ 85°C
10
µA
Switch Output Rise Time
VI(IN) = 5.5V, CL = 1
µF
4.0
ms
VI(IN) = 2.7V, CL = 1
µF
3.8
ms
Switch Output Fall Time
VI(IN) = 5.5V, CL = 1
µF
3.9
ms
VI(IN) = 2.7V, CL = 1
µF
3.5
ms
Enable High-Level Input Voltage
4.0V
≤ V
I
≤ 5.5V
2.4
V
Enable Low-Level Input Voltage
4.0V
≤ V
I
≤ 5.5V
0.6
V
Enable Input Current
/EN = 0V or /EN = VI
-1
1
µA
Enable Delay Time, Low-to-High
Output
CL = 1
µF
CL = 1
µF
20
40
ms
ms
Short Circuit Current
VI(IN) = 5.5V, TJ=25°C
OUT Connected to GND, device enable into
short circuit
0.66
1.2
1.8
A
Supply Current, Low-Level
Output
/EN = VI , TJ=25°C
/EN = VI , -40
°C ≤ T
J
≤ 85°C
0.015
10
10
µA
µA
Supply Current, High-Level
Output
/EN = 0V, TJ=25°C
/EN = 0V, -40
°C ≤ T
J
≤ 85°C
73
100
100
µA
µA
Undervoltage lock-out Low-Level
Input Voltage
2.0
3.0
3.2
V
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. For guaranteed performance limits and associated test conditions, see
the Electrical Characteristics tables.
Note 2: To ensure constant junction temperature, low duty cycle pulse testing is used; thermal effects must be taken in consideration separately.
Note 3: The Power Dissipation for the SO-8 package is 725mW at TA = 25 °C. Above TA = 25 °C the Power Dissipation must be derated at 5.8mW/ °C (for TA =
70 °C PD = 464mW ; for TA = 125 °C PD = 145mW)
RECOMMENDED OPERATING CONDITIONS:
Min
Max
Input Voltage, VI
4.0V
5.5V
Input Voltage, VI at /EN
0V
5.5V
Continuous Output Current, IO
0A
0.6A
Operating Junction Temp. Range
-40°C
+125°C


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