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2N3391 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 2N3391
部品情報  NPN General Purpose Amplifier
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N3391 データシート(HTML) 2 Page - Fairchild Semiconductor

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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown
Voltage*
IC = 10 mA, IB = 0
25
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
µA, IE = 0
25
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
µA, IC = 0
5.0
V
ICBO
Collector-Cutoff Current
VCB = 18 V, IE = 0
100
nA
IEBO
Emitter-Cutoff Current
VEB = 5.0 V, IC = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 4.5 V, IC = 2.0 mA
2N3390
2N3391/A
2N3392
2N3393
400
250
150
90
800
500
300
180
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 1.0 MHz
2.0
10
pF
hfe
Small-Signal Current Gain
IC = 2.0 mA, VCE = 4.5 V,
f = 1.0 kHz
2N3390
2N3391/A
2N3392
2N3393
400
250
150
90
1250
800
500
400
NF
Noise Figure
VCE = 4.5 V, IC = 100
µA,
RG = 500
Ω,
2N3391A only
BW = 15.7 kHz
5.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%


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