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AD5313RBRUZ データシート(PDF) 4 Page - Analog Devices |
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AD5313RBRUZ データシート(HTML) 4 Page - Analog Devices |
4 / 28 page AD5313R Data Sheet Rev. 0 | Page 4 of 28 Parameter Min Typ Max Unit Test Conditions/Comments LOGIC OUTPUTS (SDO)2 Output Low Voltage (VOL) 0.4 V ISINK = 200 µA Output High Voltage (VOH) VLOGIC − 0.4 V ISOURCE = 200 µA Floating State Output Capacitance 4 pF POWER REQUIREMENTS VLOGIC 1.8 5.5 V ILOGIC 3 µA VDD 2.7 5.5 V Gain = 1 VREF + 1.5 5.5 V Gain = 2 IDD VIH = VDD, VIL = GND, VDD = 2.7 V to 5.5 V Normal Mode9 0.59 0.7 mA Internal reference off 1.1 1.3 mA Internal reference on, at full scale All Power-Down Modes10 1 4 µA −40°C to +85°C 6 µA −40°C to +105°C 1 DC specifications tested with the outputs unloaded, unless otherwise noted. Upper dead band = 10 mV; it exists only when VREF = VDD with gain = 1 or when VREF/2 = VDD with gain = 2. Linearity calculated using a reduced code range of 4 to 1020. 2 Guaranteed by design and characterization; not production tested. 3 Channel A can have an output current of up to 30 mA. Similarly, Channel B can have an output current of up to 30 mA, up to a junction temperature of 110°C. 4 VDD = 5 V. The device includes current limiting that is intended to protect the device during temporary overload conditions. Junction temperature may be exceeded during current limit, but operation above the specified maximum operation junction temperature can impair device reliability. 5 When drawing a load current at either rail, the output voltage headroom with respect to that rail is limited by the 25 Ω typical channel resistance of the output devices. For example, when sinking 1 mA, the minimum output voltage = 25 Ω × 1 mA = 25 mV (see Figure 29). 6 Initial accuracy presolder reflow is ±750 µV; output voltage includes the effects of preconditioning drift. See the Internal Reference Setup section. 7 Reference is trimmed and tested at two temperatures and is characterized from −40°C to +105°C. 8 Reference temperature coefficient is calculated as per the box method. See the Terminology section for more information. 9 Interface is inactive, both DACs are active, and DAC outputs are unloaded. 10 Both DACs are powered down. AC CHARACTERISTICS VDD = 2.7 V to 5.5 V; RL = 2 kΩ to GND; CL = 200 pF to GND; 1.8 V ≤ VLOGIC ≤ 5.5 V; all specifications TMIN to TMAX, unless otherwise noted. Temperature range = −40°C to +105°C, typical at 25°C. Guaranteed by design and characterization; not production tested. Table 3. Parameter1 Min Typ Max Unit Test Conditions/Comments Output Voltage Settling Time 5 7 µs ¼ to ¾ scale settling to ±2 LSB Slew Rate 0.8 V/µs Digital-to-Analog Glitch Impulse 0.5 nV-sec 1 LSB change around major carry Digital Feedthrough 0.13 nV-sec Digital Crosstalk 0.1 nV-sec Analog Crosstalk 0.2 nV-sec DAC-to-DAC Crosstalk 0.3 nV-sec Total Harmonic Distortion (THD)2 −80 dB At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz Output Noise Spectral Density (NSD) 300 nV/√Hz DAC code = midscale, 10 kHz; gain = 2 Output Noise 6 µV p-p 0.1 Hz to 10 Hz Signal-to-Noise Ratio (SNR) 90 dB At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz Spurious Free Dynamic Range (SFDR) 83 dB At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz Signal-to-Noise-and-Distortion Ratio (SINAD) 80 dB At ambient, BW = 20 kHz, VDD = 5 V, fOUT = 1 kHz 1 See the Terminology section. 2 Digitally generated sine wave at 1 kHz. |
同様の部品番号 - AD5313RBRUZ |
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同様の説明 - AD5313RBRUZ |
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