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2N4410 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 2N4410
部品情報  NPN General Purpose Amplifier
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N4410 データシート(HTML) 2 Page - Fairchild Semiconductor

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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
80
V
V(BR)CEX
Collector-Emitter Breakdown Voltage
IC = 500
µA, V
BB = 5.0 V
RBE = 8.2 k
120
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10
µA, I
E = 0
120
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
µA, IC = 0
5.0
V
ICBO
Collector Cutoff Current
VCB = 100 V, IE = 0
VCB = 100 V, IE = 0, TA = 100
°C
10
1.0
nA
µA
IEBO
Emitter Cutoff Current
VEB = 4.0 V, IC = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 10 mA
60
60
400
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
0.2
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1.0 mA, IB = 0.1 mA
0.8
V
VBE(on)
Base-Emitter On Voltage
VCE = 5.0 V, IC = 1.0 mA
0.8
V
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
VCB = 10 V, f = 100 kHz
12
pF
Cib
Input Capacitance
VEB = 0.5 V, f = 100 kHz
50
pF
hfe
Small-Signal Current Gain
IC = 10 mA, VCE = 10 V,
f = 30 MHz
2.0
10
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%


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