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2N5366 データシート(PDF) 1 Page - Fairchild Semiconductor

部品番号 2N5366
部品情報  PNP General Purpose Amplifier
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

2N5366 データシート(HTML) 1 Page - Fairchild Semiconductor

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©2002 Fairchild Semiconductor Corporation
Rev. A1, July 2002
TO-92
1
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
Thermal Characteristics T
A=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
40
V
VEBO
Emitter-Base Voltage
4.0
V
IC
Collector current
- Continuous
500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
VCBO
Collector-Base Breakdown Voltage
IC = 10
µA40
V
VCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
40
V
VEBO
Emitter-Base Breakdown Voltage
IC = 10
µA4.0
V
ICBO
Collector Cut-off Current
VCB = 40V
100
nA
ICES
Collector Cut-off Current
VCB = 40V
100
nA
IEBO
Emitter Cut-off Current
VEB = 4.0V
10
µA
hFE
DC Current Gain
VCE = 10V, IC = 2.0mA
VCE = 1.0V, IC = 50mA
VCE = 5.0V, IC = 300mA
80
100
40
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50mA, IB = 2.5mA
IC = 300mA, IB = 30mA
0.25
1.0
V
VBE(sat)
Collector-Emitter Saturation Voltage
IC = 50mA, IB = 2.5mA
IC = 300mA, IB = 30mA
1.1
2.0
VBE(on)
Base-Emitter On Voltage
VCE = 10V, IC = 2.0mA
0.5
0.8
V
Cob
Output Capacitance
VCB = 10V, f = 1MHz
8.0
pF
Cib
Input Capacitance
VCB = 0.5V, f = 1MHz
35
pF
hfe
Small-Signal Current Gain
VCE = 10V, IC = 2.0mA, f = 1MHz
80
450
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
625
5.0
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
2N5366
PNP General Purpose Amplifier
• This device is designed for general purpose amplifiers applications at
collector currents to 300mA.
• Sourced from process 68.
1. Emitter 2. Collector 3. Base


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