2SK3018

Transistor

Rev.B

3/3

−50

0

25

150

0

3

6

9

CHANNEL TEMPERATURE : Tch (

°C)

−25

50

75

100 125

2

1

4

5

7

8

Fig.7 Static drain-source on-state

resistance vs. channel

temperature

Pulsed

0.0001

0.001

0.01

0.02

0.5

0.005

0.0002

0.0005 0.001 0.002

0.005 0.01 0.02

0.05

0.05

0.1

0.2

0.1

0.2

0.5

0.002

Ta=

−25

°C

25

°C

75

°C

125

°C

=3V

Pulsed

Fig.8 Forward transfer

admittance vs. drain current

200m

1.5

1

0.5

0

100m

50m

20m

10m

5m

2m

1m

0.5m

0.2m

0.1m

=0V

Pulsed

Ta=125

°C

75

°C

25

°C

−25

°C

Fig.9 Reverse drain current vs.

source-drain voltage (

Ι )

200m

1.5

1

0.5

0

100m

50m

20m

10m

5m

2m

1m

0.5m

0.2m

0.1m

Ta=25

°C

Pulsed

=4V

0V

Fig.10 Reverse drain current vs.

source-drain voltage (

ΙΙ )

0.1

1

2

50

0.5

0.2

0.5

1

2

5

10

20

50

5

10

20

Fig.11 Typical capacitance vs.

drain-source voltage

Ta

=25

°C

0.1

10

20

500

5

0.2

0.5

1

2

5

10

20

50

50

100

200

1000

2

100

Fig.12 Switching characteristics

(See Figures 13 and 14 for

the measurement circuit

and resultant waveforms)

Ta

=25

°C

Ω

Pulsed

Switching characteristics measurement circuit

Fig.13 Switching time measurement circuit

D.U.T.

90%

50%

10%

90%

10%

50%

Pulse width

10%

90%

Fig.14 Switching time waveforms