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2SK3019TL データシート(PDF) 1 Page - Rohm

部品番号 2SK3019TL
部品情報  2.5V Drive Nch MOS FET
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メーカー  ROHM [Rohm]
ホームページ  http://www.rohm.com
Logo ROHM - Rohm

2SK3019TL データシート(HTML) 1 Page - Rohm

  2SK3019TL Datasheet HTML 1Page - Rohm 2SK3019TL Datasheet HTML 2Page - Rohm 2SK3019TL Datasheet HTML 3Page - Rohm 2SK3019TL Datasheet HTML 4Page - Rohm  
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2SK3019
Transistor
Rev.C
1/3
2.5V Drive Nch MOS FET
2SK3019
Structure
Silicon N-channel
MOSFET
Applications
Interfacing, switching (30V, 100mA)
Features
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
Dimensions (Unit : mm)
(1)Source
(2)Gate
(3)Drain
EMT3
1.6
0.7
0.15
0.55
0.2
1.0
0.3
(2)
0.5
0.5
(3)
0.2
(1)
Abbreviated symbol : KN
Packaging specifications
TL
3000
2SK3019
Type
Package
Code
Basic ordering unit
(pieces)
Taping
Absolute maximum ratings (Ta=25
°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
VDSS
VGSS
PD2
Tch
30
V
V
mA
mW
°C
±20
±100
ID
IDP1
Continuous
Pulsed
mA
±400
150
150
Tstg
°C
−55 to +150
Symbol
Limits
Unit
∗1 Pw≤10µs, Duty cycle≤1%
∗2 With each pin mounted on the recommended lands.
Equivalent circuit
Drain
Source
Gate
∗ Gate
Protection
Diode
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
Thermal resistance
Parameter
°C / W
Rth(ch-a)
Symbol
Limits
Unit
Channel to ambient
∗ With each pin mounted on the recommended lands.
833


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