SMUN5312DW1T1G datasheet(9/34 Pages) ONSEMI

部品番号	SMUN5312DW1T1G

部品情報	Dual Bias Resistor Transistors

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MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series

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9

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5312DW1T1G, SMUN5312DW1T1G

PNP TRANSISTOR

Figure 17. VCE(sat) versus IC

Figure 18. DC Current Gain

1000

10

IC, COLLECTOR CURRENT (mA)

100

10

1

100

Figure 19. Output Capacitance

IC, COLLECTOR CURRENT (mA)

0

10

20

30

VO = 0.2 V

TA =-25°C

75

°C

100

10

1

0.1

40

50

Figure 20. Output Current versus Input Voltage

100

10

1

0.1

0.01

0.001

0

1

2

3

4

Vin, INPUT VOLTAGE (VOLTS)

5

6

7

8

9

10

Figure 21. Input Voltage versus Output Current

0.01

0.1

1

10

40

IC, COLLECTOR CURRENT (mA)

0

20

50

75

°C

25

°C

TA =-25°C

50

010

20

30

40

4

3

2

1

0

VR, REVERSE BIAS VOLTAGE (VOLTS)

25

°C

IC/IB = 10

25

°C

-25

°C

VCE = 10 V

TA =75°C

f = 1 MHz

lE = 0 V

TA = 25°C

75

°C

25

°C

TA =-25°C

VO = 5 V

同様の部品番号 - SMUN5312DW1T1G

メーカー	部品番号	データシート	部品情報
ON Semiconductor	SMUN5312DW1T1G	168Kb / 10P	Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k September, 2012 ??Rev. 0
ON Semiconductor	SMUN5312DW1T1G	105Kb / 10P	Complementary Bias Resistor Transistors June, 2015 ??Rev. 3

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同様の説明 - SMUN5312DW1T1G

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