ACE8810B datasheet(2/6 Pages) ACE

部品番号	ACE8810B

部品情報	Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

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メーカー	ACE [ACE Technology Co., LTD.]

ホームページ	http://www.ace-ele.com

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ACE8810B

Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

VER 1.2

2

Ordering information

ACE8810B XX + H

Electrical CharacteristicsTA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

20

V

Zero Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

1

uA

Gate Leakage Current

IGSS

VGS=±8V, VDS=0V

±3.5

±10

uA

Static Drain-Source On-Resistance

RDS(ON)

VGS=4.5V, ID=8A

14

21

m

Ω

VGS=2.5V, ID=7A

17

25

VGS=1.8V, ID=6A

22

33

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

0.4

0.5

1

V

Forward Transconductance

gFS

VDS=5V, ID=6.5A

13

S

Diode Forward Voltage

VSD

ISD=2.5A, VGS=0V

0.79

1.6

V

Maximum Body-Diode Continuous

Current

IS

2.5

A

Switching

Total Gate Charge

Qg

VDS=10V, ID=8A

VGS=4.5V

13.8

17.94

nC

Gate-Source Charge

Qgs

4.1

5.33

Gate-Drain Charge

Qgd

5.6

7.28

Turn-On Delay Time

Td(on)

VDS=10V, VGS=5V

RGEN=3Ω, RL=1.5Ω

6.2

12.4

ns

Turn-On Rise Time

tf

12.7

25.4

Turn-Off Delay Time

td(off)

51.7

103.4

Turn-Off Fall Time

tf

16

32

Dynamic

Input Capacitance

Ciss

VDS=10V, VGS=0V

f=1MHz

1160

pF

Output Capacitance

Coss

104

Reverse Transfer Capacitance

Crss

29

Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

C. The current rating is based on the t

≤ 10s junction to ambient thermal resistance rating.

TM : TSSOP-8

Pb - free

Halogen - free

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