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ACE8810B データシート(PDF) 2 Page - ACE Technology Co., LTD. |
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ACE8810B データシート(HTML) 2 Page - ACE Technology Co., LTD. |
2 / 6 page ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.2 2 Ordering information ACE8810B XX + H Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 uA Gate Leakage Current IGSS VGS=±8V, VDS=0V ±3.5 ±10 uA Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=8A 14 21 m Ω VGS=2.5V, ID=7A 17 25 VGS=1.8V, ID=6A 22 33 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.4 0.5 1 V Forward Transconductance gFS VDS=5V, ID=6.5A 13 S Diode Forward Voltage VSD ISD=2.5A, VGS=0V 0.79 1.6 V Maximum Body-Diode Continuous Current IS 2.5 A Switching Total Gate Charge Qg VDS=10V, ID=8A VGS=4.5V 13.8 17.94 nC Gate-Source Charge Qgs 4.1 5.33 Gate-Drain Charge Qgd 5.6 7.28 Turn-On Delay Time Td(on) VDS=10V, VGS=5V RGEN=3Ω, RL=1.5Ω 6.2 12.4 ns Turn-On Rise Time tf 12.7 25.4 Turn-Off Delay Time td(off) 51.7 103.4 Turn-Off Fall Time tf 16 32 Dynamic Input Capacitance Ciss VDS=10V, VGS=0V f=1MHz 1160 pF Output Capacitance Coss 104 Reverse Transfer Capacitance Crss 29 Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t ≤ 10s junction to ambient thermal resistance rating. TM : TSSOP-8 Pb - free Halogen - free |
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同様の説明 - ACE8810B |
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