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BD1366 データシート(PDF) 1 Page - Fairchild Semiconductor |
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BD1366 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW=350 µs, duty Cycle=2% Pulsed hFE Classificntion Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 : BD138 : BD140 - 45 - 60 - 80 V V V VCEO Collector-Emitter Voltage : BD136 : BD138 : BD140 - 45 - 60 - 80 V V V VEBO Emitter-Base Voltage - 5 V IC Collector Current (DC) - 1.5 A ICP Collector Current (Pulse) - 3.0 A IB Base Current - 0.5 A PC Collector Dissipation (TC=25°C) 12.5 W PC Collector Dissipation (Ta=25°C) 1.25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) * Collector-Emitter Sustaining Voltage : BD136 : BD138 : BD140 IC = - 30mA, IB = 0 - 45 - 60 - 80 V V V ICBO Collector Cut-off Current VCB = - 30V, IE = 0 - 0.1 µA IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA hFE1 hFE2 hFE3 * DC Current Gain VCE = - 2V, IC = - 5mA VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 150mA 25 25 40 250 VCE(sat) * Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA - 0.5 V VBE(on) * Base-Emitter ON Voltage VCE = - 2V, IC = - 0.5A - 1 V Classification 6 10 16 hFE3 40 ~ 100 63 ~ 160 100 ~ 250 BD136/138/140 Medium Power Linear and Switching Applications • Complement to BD135, BD137 and BD139 respectively 1 TO-126 1. Emitter 2.Collector 3.Base |
同様の部品番号 - BD1366 |
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同様の説明 - BD1366 |
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