BD243C datasheet(1/4 Pages) FAIRCHILD

部品番号	BD243C

部品情報	Medium Power Linear and Switching Applications

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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Rev. A, February 2000

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test :PW=300

µs, duty Cycle<20% Pulsed

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

: BD243

: BD243A

: BD243B

: BD243C

45

60

80

100

V

VCEO

Collector-Emitter Voltage

: BD243

: BD243A

: BD243B

: BD243C

45

60

80

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current (DC)

6

A

ICP

*Collector Current (Pulse)

10

A

IB

Base Current

2

A

PC

Collector Dissipation (TC=25°C)

65

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

* Collector-Emitter Sustaining Voltage

: BD243

: BD243A

: BD243B

: BD243C

IC=30mA, IB=0

45

60

80

100

V

ICEO

Collector Cut-off Current

: BD243/243A

: BD243B/243C

VCE = 30V, IB = 0

VCE = 60V, IB = 0

0.7

mA

ICES

Collector Cut-off Current

: BD243

: BD243A

: BD243B

: BD243C

VCE = 45V, VBE = 0

VCE = 60V, VBE = 0

VCE = 80V, VBE = 0

VCE = 100V, VBE = 0

0.4

mA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

1

mA

hFE

*DC Current Gain

VCE = 4V, IC = 0.3A

VCE = 4V, IC = 3A

30

15

VCE(sat)

*Collector-Emitter Saturation Voltage

IC = 6A, IB = 1A

1.5

V

VBE(on)

*Base-Emitter ON Voltage

VCE = 4V, IC = 6A

2

V

BD243/A/B/C

Medium Power Linear and Switching

Applications

• Complement to BD244, BD244A, BD244B and BD244C respectively

1.Base

2.Collector

3.Emitter

1

TO-220

同様の部品番号 - BD243C

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	BD243C	127Kb / 3P	POWER TRANSISTORS(6A,65W)
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ON Semiconductor	BD243C	140Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON 1995 REV 7

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