BU406 datasheet(1/5 Pages) FAIRCHILD

部品番号	BU406

部品情報	High Voltage Switching

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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Rev. A, February 2000

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

400

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current (DC)

7

A

ICP

Collector Current (Pulse)

10

A

IB

Base Current

4

A

PC

Collector Dissipation

60

W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Max.

Units

ICES

Collector Cut-off Current

VCE = 400V, VBE = 0

VCE = 250V, VBE = 0

VCE = 250V, VBE = 0 @ TC=150°C

5

100

1

mA

µA

mA

IEBO

Emitter Cut-off Current

VBE = 6V, IC = 0

1

mA

VCE(sat)

Collector-Emitter Saturation Voltage

: BU406

: BU406H

: BU408

IC = 5A, IB = 0.5A

IC = 5A, IB = 0.8A

IC = 6A, IB = 1.2A

1

V

VBE(sat)

Base-Emitter Saturation Voltage

: BU406

: BU406H

: BU408

IC = 5A, IB = 0.5A

IC = 6A, IB = 1.2A

1.2

1.5

V

fT

Current Gain Bandwidth Product

VCE = 10V, IC = 0.5A

10

MHz

tOFF

Turn OFF Time

: BU406

: BU406H

: BU408

IC = 5A, IB = 0.5A

IC = 5A, IB = 0.8A

IC = 6A, IB = 1.2A

0.75

0.4

µs

BU406/406H/408

High Voltage Switching

• Use In Horizontal Deflection Output Stage

1.Base

2.Collector

3.Emitter

1

TO-220

同様の部品番号 - BU406

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	BU406	106Kb / 3P	POWER TRANSISTORS(7A,150-200V,60W)
Dc Components	BU406	194Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
JILIN SINO-MICROELECTRO...	BU406	287Kb / 5P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Motorola, Inc	BU406	100Kb / 4P	7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS
ON Semiconductor	BU406	127Kb / 3P	NPN Power Transistors May, 2009 ??Rev. 8

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