LMBTH10WT3G datasheet(1/7 Pages) LRC

部品番号	LMBTH10WT3G

部品情報	VHF/UHF Transistors RoHS requirements.

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メーカー	LRC [Leshan Radio Company]

ホームページ	http://www.lrc.cn/

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LESHAN RADIO COMPANY, LTD.

1

3

2

LMBTH10WT1G

SC-70/SOT–323

VHF/UHF Transistors

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

25

Vdc

Collector–Base Voltage

V

CBO

30

Vdc

Emitter–Base Voltage

V

EBO

3.0

Vdc

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

V

(BR)CEO

25

—

Vdc

(I

C = 1.0 mAdc, I B= 0 )

Collector–Base Breakdown Voltage

V

(BR)CBO

30

—

Vdc

(I

C = 100 µAdc , I E = 0)

Emitter–Base Breakdown Voltage

V

(BR)EBO

3.0

—

Vdc

(I

E = 10 µAdc , I C= 0)

Collector Cutoff Current

I

CBO

—

100

nAdc

( V

CB = 25Vdc , I E = 0 )

Emitter Cutoff Current

I

EBO

—

100

nAdc

( V

EB = 2.0Vdc , I C= 0 )

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

EMITTER

3

COLLECTOR

1

BASE

Featrues

We declare that the material of product

compliance with RoHS requirements.

Collector Current

I C

50

mA

Characteristic

Symbol

M a x

Unit

Total Device Dissipation FR- 5 Board (1)

P D

150

mW

T A =25 °C

Derate above 25°C

1.2

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

833

°C/W

Total Device Dissipation

P D

200

mW

Alumina Substrate, (2) T A = 25°C

Derate above 25°C

1.6

mW/°C

Thermal Resistance, Junction to Ambient

R θJA

625

°C/W

Junction and Storage Temperature

T J , Tstg

–55to+150

°C

Device

Marking

Shipping

LMBTH10WT1G

3E

3000/Tape&Reel

LMBTH10WT3G

3E

10000/Tape&Reel

ORDERING INFORMATION

Rev.O 1/7

同様の部品番号 - LMBTH10WT3G

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	LMBTH10WT1G	164Kb / 5P	VHF/UHF Transistors
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同様の説明 - LMBTH10WT3G

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