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STB34NM60ND データシート(PDF) 5 Page - STMicroelectronics |
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STB34NM60ND データシート(HTML) 5 Page - STMicroelectronics |
5 / 22 page STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND Electrical characteristics Doc ID 18099 Rev 5 5/22 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) - 29 116 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 29 A, VGS = 0 - 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 29 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) - 175 1.4 16 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 29 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) - 255 2.6 20 ns µC A |
同様の部品番号 - STB34NM60ND |
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同様の説明 - STB34NM60ND |
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