IRFP4710PBF datasheet(2/9 Pages) IRF

部品番号	IRFP4710PBF

部品情報	HEXFETPower MOSFET

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IRFP4710PbF

2

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Parameter

Min. Typ. Max. Units

Conditions

gfs

Forward Transconductance

35

––– –––

S

VDS = 50V, ID = 45A

Qg

Total Gate Charge

–––

110

170

ID = 45A

Qgs

Gate-to-Source Charge

–––

43

–––

nC

VDS = 50V

Qgd

Gate-to-Drain ("Miller") Charge

–––

40

–––

VGS = 10V,

td(on)

Turn-On Delay Time

–––

35

–––

VDD = 50V

tr

Rise Time

–––

130 –––

ID = 45A

td(off)

Turn-Off Delay Time

–––

41

–––

RG = 4.5Ω

tf

Fall Time

–––

38

–––

VGS = 10V

Ciss

Input Capacitance

–––

6160 –––

VGS = 0V

Coss

Output Capacitance

–––

440 –––

VDS = 25V

Crss

Reverse Transfer Capacitance

–––

250 –––

pF

ƒ = 1.0MHz

Coss

Output Capacitance

–––

1580 –––

VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz

Coss

Output Capacitance

–––

280 –––

VGS = 0V, VDS = 80V, ƒ = 1.0MHz

Coss eff.

Effective Output Capacitance

–––

430 –––

VGS = 0V, VDS = 0V to 80V

Dynamic @ TJ = 25°C (unless otherwise specified)

ns

Parameter

Typ.

Max.

Units

EAS

Single Pulse Avalanche Energy

–––

190

mJ

IAR

Avalanche Current

–––

45

A

EAR

Repetitive Avalanche Energy

–––

20

mJ

Avalanche Characteristics

S

D

G

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

–––

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

–––

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

V

TJ = 25°C, IS = 45A, VGS = 0V

trr

Reverse Recovery Time

–––

74

110

ns

TJ = 25°C, IF = 45A

Qrr

Reverse RecoveryCharge

–––

180 260

nC

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Diode Characteristics

72

300

A

Static @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

100

–––

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

–––

0.11

–––

V/°C Reference to 25°C, ID = 1mA

RDS(on)

Static Drain-to-Source On-Resistance

––– 0.011 0.014

Ω

VGS = 10V, ID = 45A

VGS(th)

Gate Threshold Voltage

3.5

–––

5.5

V

VDS = VGS, ID = 250µA

–––

1.0

µA

VDS = 95V, VGS = 0V

–––

250

VDS = 80V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

–––

100

VGS = 20V

Gate-to-Source Reverse Leakage

–––

––– -100

nA

VGS = -20V

IGSS

IDSS

Drain-to-Source Leakage Current

同様の部品番号 - IRFP4710PBF

メーカー	部品番号	データシート	部品情報
International Rectifier	IRFP4710PBF	183Kb / 9P	High frequency DC-DC converters
International Rectifier	IRFP4710PBF	183Kb / 9P	High frequency DC-DC converters

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