AM8958C datasheet(1/8 Pages) ANALOGPOWER

部品番号	AM8958C

部品情報	P & N-Channel 32-V (D-S) MOSFET

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AM8958C

Analog Power

September, 2003 - Rev. A

PRELIMINARY

Publication Order Number:

DS-AM8958_F

These miniature surface mount MOSFETs utilize

High Cell Density process. Low r

DS(on) assures

minimal power loss and conserves energy, making

this device ideal for use in power management

circuitry. Typical applications are PWMDC-DC

converters, power management in portable and

battery-powered products such as computers,

printers, battery charger, telecommunication power

system, and telephones power system.

VDS (V)

rDS(on) m(Ω)ID (A)

40 @ VGS = 4.5V

6.0

29 @ VGS = 10V

7.0

80 @ VGS = -4.5V

-4.0

52 @ VGS = -10V

-5.2

32

PRODUCT SUMMARY

-32

P & N-Channel 32-V (D-S) MOSFET

•Low r

DS(on) Provides Higher Efficiency and

Extends Battery Life

•

Miniature SO-8 Surface Mount Package

Saves Board Space

•

High power and current handling capability

•

Low side high current DC-DC Converter

applications

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

7

8

5

6

Symbol N-Channel P-Channel Units

VDS

32

-32

VGS

±20

TA=25

oC

7

-5.2

TA=70

oC

5.6

-6.8

IDM

20

-20

IS

1.3

-1.3

A

TA=25

oC

2.1

TA=70

oC1.3

1.3

TJ, Tstg

oC

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

-55 to 150

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Symbol

Maximum Units

Maximum Junction-to-Case

a

t <= 5 sec

RθJC

40

oC/W

Maximum Junction-to-Ambient

a

t <= 5 sec

RθJA

60

oC/W

THERMAL RESISTANCE RATINGS

Parameter

同様の部品番号 - AM8958C

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