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AM9926N データシート(PDF) 1 Page - Analog Power |
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AM9926N データシート(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM9926N N-Channel 20-V (D-S) MOSFET VDS (V) ID(A) 6.9 6.0 Symbol Limit Units VDS 20 VGS ±12 TA=25°C 6.9 TA=70°C 5.4 IDM 30 IS 2.8 A TA=25°C 2.1 TA=70°C 1.3 TJ, Tstg -55 to 150 °C Symbol Maximum Units 62.5 110 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Gate-Source Voltage PRODUCT SUMMARY 20 rDS(on) (mΩ) 30 @ VGS = 4.5V 40 @ VGS = 2.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM9926N_1A |
同様の部品番号 - AM9926N |
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同様の説明 - AM9926N |
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