AM50N06-20D datasheet(1/5 Pages) ANALOGPOWER

部品番号	AM50N06-20D

部品情報	N-Channel 60-V (D-S) MOSFET

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AM50N06-20D

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM50N06-20_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

rDS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m( )

ID (A)

20 @ VGS = 10V

41

29 @ VGS = 4.5V

34

PRODUCT SUMMARY

60

N-Channel 60-V (D-S) MOSFET

•

Low rDS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

DPAK saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol

Limit

Units

VDS

60

VGS

±20

Continuous Drain Current

a

TC=25

o

C ID

41

IDM

100

IS

50

A

Power Dissipation

a

TC=25

o

C PD

50

W

TJ, Tstg

-55 to 175

o

C

Operating Junction and Storage Temperature Range

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Paramete r

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

A

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Ambient

a

RθJA

50

oC/W

Maximum Junction-to-Case

RθJC

3.0

oC/W

THERMAL RESISTANCE RATINGS

同様の部品番号 - AM50N06-20D

メーカー	部品番号	データシート	部品情報
SHENZHEN DOINGTER SEMIC...	AM50N06-20D	1,014Kb / 4P	N-Channel MOSFET uses advanced trench technology

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