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FDC6401N データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDC6401N データシート(HTML) 2 Page - Fairchild Semiconductor |
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2 / 5 page  FDC6401N Rev C (W) Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 13 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V 100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.5 0.9 1.5 V ∆VGS(th) ∆T J Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –3 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 4.5 V, ID = 3.0 A VGS = 2.5 V, ID = 2.5 A VGS = 4.5 V, ID = 3.0 A,TJ=125 °C 50 66 71 70 95 106 m Ω ID(on) On–State Drain Current VGS = 4.5 V, VDS = 5 V 12 A gFS Forward Transconductance VDS = 5V, ID = 3.0 A 10 S Dynamic Characteristics Ciss Input Capacitance 324 pF Coss Output Capacitance 82 pF Crss Reverse Transfer Capacitance VDS = 10 V, V GS = 0 V, f = 1.0 MHz 42 pF Switching Characteristics (Note 2) td(on) Turn–On Delay Time 5 10 ns tr Turn–On Rise Time 7 14 ns td(off) Turn–Off Delay Time 13 23 ns tf Turn–Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 1.6 3 ns Qg Total Gate Charge 3.3 4.6 nC Qgs Gate–Source Charge 0.95 nC Qgd Gate–Drain Charge VDS = 10 V, ID = 3.0 A, VGS = 4.5 V 0.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 0.8 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 0.8 A (Note 2) 0.7 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 130 °C/W when mounted on a 0.125 in 2 pad of 2 oz. copper. b) 140 °C/W when mounted on a .004 in 2 pad of 2 oz copper c) 180 C°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% |
同様の部品番号 - FDC6401N |
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同様の説明 - FDC6401N |
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