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FDD3680 データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDD3680 データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 5 page February 2001 ©2001 Fairchild Semiconductor Corporation FDD3680 Rev B1(W) FDD3680 100V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 25 A, 100 V. RDS(ON) = 46 mΩ @ VGS = 10 V RDS(ON) = 51 m Ω @ VGS = 6 V • Low gate charge (38 nC typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. G S D TO-252 S D G Absolute Maximum Ratings T A=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current – Continuous (Note 1) 25 A Drain Current – Pulsed 100 Maximum Power Dissipation (Note 1) 68 (Note 1a) 3.8 PD (Note 1b) 1.6 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.2 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3680 FDD3680 13’’ 16mm 2500 units |
同様の部品番号 - FDD3680 |
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同様の説明 - FDD3680 |
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