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FDD5670 データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDD5670 データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page FDD5670 Rev. A Electrical Characteristics TC=25 oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 V IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA ON CHARACTERISTICS (Note 2) VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250 µA 24 V RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 10 A VGS = 6 V, ID = 9 A 0.015 0.018 Ω DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current 48 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.4 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the drain tab. RθJC is guaranteed by design while RθCAis determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) RθJA= 45 oC/W when mounted on a 1 in2 pad of 2oz copper. b) RθJA= 96 oC/W when mounted on a 0.076 in2 pad of 2oz copper. |
同様の部品番号 - FDD5670 |
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同様の説明 - FDD5670 |
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