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FDD5680 データシート(PDF) 2 Page - Fairchild Semiconductor

部品番号 FDD5680
部品情報  N-Channel, PowerTrench??MOSFET
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5680 データシート(HTML) 2 Page - Fairchild Semiconductor

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FDD5680, Rev. C
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 38 A
140
mJ
IAR
Maximum Drain-Source Avalanche Current
38
A
BVDSS
Drain-Source Breakdown
Voltage
VGS = 0 V, ID = 250 µA
60
V
∆BVDSS
∆T
J
Breakdown Voltage
Temperature Coefficient
ID = 250µA, Referenced to 25°C
60
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 48 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20V, VDS = 0 V
100
nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
22.4
4
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA,Referenced to 25°C
-6.4
mV/°C
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 8.5 A
VGS = 10 V, ID = 8.5 A,TJ=125°C
VGS = 6 V, ID = 7.5 A
0.017
0.028
0.019
0.021
0.042
0.025
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
50
A
gFS
Forward Transconductance
VDS = 5 V, ID = 8.5 A
30
S
Dynamic Characteristics
Ciss
Input Capacitance
1835
pF
Coss
Output Capacitance
210
pF
Crss
Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
90
pF
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
15
27
ns
tr
Turn-On Rise Time
9
18
ns
td(off)
Turn-Off Delay Time
35
56
ns
tf
Turn-Off Fall Time
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
16
26
ns
Qg
Total Gate Charge
33
46
nC
Qgs
Gate-Source Charge
6.5
nC
Qgd
Gate-Drain Charge
VDS = 30 V, ID = 8.5 A,
VGS = 10 V,
7.5
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.3
A
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A (Note 2)
0.75
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθJA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%
a) RθJA= 45
oC/W when mounted
on a 1in2 pad of 2oz copper.
b) RθJA= 96
oC/W when mounted
on a 0.076 pad of 2oz copper.


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