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FDD6035AL データシート(Datasheet) 2 Page - Fairchild Semiconductor

部品番号. FDD6035AL
部品情報  N-Channel, Logic Level, PowerTrench MOSFET
ダウンロード  6 Pages
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
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FDD6035AL Rev. D(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
Single Pulse, VDD = 15 V, ID= 12A
180
mJ
IAS
Drain-Source Avalanche Current
12
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
30
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA,Referenced to 25°C
24
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS =
±20 V, V
DS = 0 V
±100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
1
1.9
3
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA,Referenced to 25°C
–5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 12 A
VGS = 4.5 V,
ID = 10 A
VGS = 10 V, ID = 12 A,TJ=125
°C
7.7
9.9
11.4
12
14
19
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
50
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 12 A
47
S
Dynamic Characteristics
Ciss
Input Capacitance
1230
pF
Coss
Output Capacitance
325
pF
Crss
Reverse Transfer Capacitance
VDS = 15 V,
V GS = 0 V,
f = 1.0 MHz
150
pF
RG
Gate Resistance
VGS = 15 mV,
f = 1.0 MHz
1.5
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
10
19
ns
tr
Turn–On Rise Time
7
13
ns
td(off)
Turn–Off Delay Time
29
46
ns
tf
Turn–Off Fall Time
VDD = 15 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
12
21
ns
Qg
Total Gate Charge
13
18
nC
Qgs
Gate–Source Charge
3.5
nC
Qgd
Gate–Drain Charge
VDS = 15V,
ID = 12 A,
VGS = 5 V
5.1
nC




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