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FDG311N データシート(PDF) 3 Page - Fairchild Semiconductor |
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FDG311N データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 5 page FDG311N Rev. D Typical Characteristics 0 2 4 6 8 10 00.5 11.522.5 3 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 4.5V 3.0V 2.5V 2.0V 1.5V 3.5V 0.8 1 1.2 1.4 1.6 1.8 2 02468 10 ID, DRAIN CURRENT (A) VGS = 2.0V 2.5V 4.0V 3.5V 4.5V 3.0V 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 1.9A VGS = 4.5V 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 123 45 VGS, GATE TO SOURCE VOLTAGE (V) ID = 1A TA = 125 oC TA = 25 oC 0 2 4 6 8 10 0 1234 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25oC 125 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
同様の部品番号 - FDG311N |
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同様の説明 - FDG311N |
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