SI8416DB datasheet(2/9 Pages) VISHAY

部品番号	SI8416DB

部品情報	N-Channel 8 V (D-S) MOSFET

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Document Number: 63716

S11-2526-Rev. A, 26-Dec-11

Vishay Siliconix

Si8416DB

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Maximum under steady state conditions is 85 °C/W.

c. Case is defined as top surface of the package.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, b

RthJA

37

45

°C/W

Maximum Junction-to-Case (Drain)c

Steady State

RthJC

79.5

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 µA

8V

VDS Temperature Coefficient

ΔVDS/TJ

ID = 250 µA

2.2

mV/°C

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

- 2.7

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.35

0.80

V

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 5 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 8 V, VGS = 0 V

1

µA

VDS = 8 V, VGS = 0 V, TJ = 70 °C

10

On-State Drain Currenta

ID(on)

VDS ≥ 5 V, VGS = 4.5 V

5A

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 1.5 A

0.019

0.023

Ω

VGS = 2.5 V, ID = 1 A

0.021

0.025

VGS = 1.8 V, ID = 1 A

0.023

0.030

VGS = 1.5 V, ID = 0.5 A

0.027

0.040

VGS = 1.2 V, ID = 0.5 A

0.040

0.095

Forward Transconductancea

gfs

VDS = 4 V, ID = 1.5 A

22

S

Dynamicb

Input Capacitance

Ciss

VDS = 4 V, VGS = 0 V, f = 1 MHz

1470

pF

Output Capacitance

Coss

580

Reverse Transfer Capacitance

Crss

450

Total Gate Charge

Qg

VDS = 4 V, VGS = 4.5 V, ID = 1.5 A

17

26

nC

Gate-Source Charge

Qgs

1.8

Gate-Drain Charge

Qgd

3.4

Gate Resistance

Rg

VGS = 0.1 V, f = 1 MHz

2.5

Ω

Turn-On Delay Time

td(on)

VDD = 4 V, RL = 2.7 Ω

ID ≅ 1.5 A, VGEN = 4.5 V, Rg = 1 Ω

13

25

ns

Rise Time

tr

15

30

Turn-Off Delay Time

td(off)

40

80

Fall Time

tf

10

20

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