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SI8424CDB データシート(PDF) 4 Page - Vishay Siliconix |
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SI8424CDB データシート(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 63894 S12-2181-Rev. A, 10-Sep-12 Vishay Siliconix Si8424CDB This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical questions, contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.010 0.020 0.030 0.040 0.050 0 1 2 3 4 5 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 2 A 0.001 0 40 80 60 110 Time (s) 20 0.01 0.1 100 600 Safe Operating Area, Junction-to-Ambient 0.01 0.1 1 10 100 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 10 s 100 ms Limited by R DS(on)* 1 ms T A = 25 °C BVDSS Limited 10 ms 1 s DC |
同様の部品番号 - SI8424CDB |
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同様の説明 - SI8424CDB |
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