FDN336P Rev.C

0.0001

0.001

0.01

0.1

1

10

100 300

0

10

20

30

40

50

SINGLE PULSE TIME (SEC)

SINGLE PULSE

R

=270°C/W

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

0.0001

0.001

0.01

0.1

1

10

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

R

(t) = r(t) * R

R

= 270 °C/W

Duty Cycle, D = t /t

1

2

θJA

θJA

θJA

T - T

= P * R

(t)

A

J

P(pk)

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

0.1

0.2

0.5

1

2

5

10

20

40

100

200

400

700

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Ciss

f = 1 MHz

V

= 0 V

GS

Coss

Crss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical Characteristics

(continued)

0

1

2

3

4

0

1

2

3

4

5

Q

, GATE CHARGE (nC)

g

V

= -5V

DS

-15V

I

= -1.3A

D

-10V

0.2

0.5

1

3

5

10

30

0.01

0.03

0.1

0.3

1

3

10

30

-V

, DRAIN-SOURCE VOLTAGE (V)

RDS(ON)

LIMIT

DS

V

= -4.5V

SINGLE PULSE

R

= 270°C/W

T

= 25°C

θJA

GS

A

DC

1s

100ms

10ms

1ms

10s

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.