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FDN339AN データシート(PDF) 2 Page - Fairchild Semiconductor |
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FDN339AN データシート(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page FDN339AN Rev. C Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 250 °C/W when mounted on a 0.02 in2 Pad of 2 oz. Cu. b) 270 °C/W on a minimum mounting pad of 2 oz. Cu. Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C 14 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.85 1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA,Referenced to 25°C -3 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 3 A VGS = 4.5 V, ID = 3 A, TJ=125 °C VGS = 2.5 V, ID = 2.4 A 0.029 0.040 0.039 0.035 0.061 0.050 Ω ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A gFS Forward Transconductance VDS = 5 V, ID = 3 A 11 S Dynamic Characteristics Ciss Input Capacitance 700 pF Coss Output Capacitance 175 pF Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz 85 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 8 16 ns tr Turn-On Rise Time 10 18 ns td(off) Turn-Off Delay Time 18 29 ns tf Turn-Off Fall Time VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 5 10 ns Qg Total Gate Charge 7 10 nC Qgs Gate-Source Charge 1.2 nC Qgd Gate-Drain Charge VDS = 10 V, ID = 3 A, VGS = 4.5 V 1.9 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current 0.42 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note 2) 0.65 1.2 V |
同様の部品番号 - FDN339AN |
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同様の説明 - FDN339AN |
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