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FDS4410 データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDS4410 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS4410 Rev.B1 0 5 10 15 20 25 0 2 4 6 8 10 Q , GATE CHARGE (nC) g I = 10A D 10V 15V V = 5V DS Figure 10. Single Pulse Maximum Power Dissipation. Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical And Thermal Characteristics Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t /t 1 2 R (t) = r(t) * R R = 125°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 0.1 0.5 1 2 5 10 30 100 200 500 1000 2000 V , DRAIN TO SOURCE VOLTAGE (V) DS C iss f = 1 MHz V = 0V GS C oss C rss 0.05 0.1 0.2 0.5 1 2 5 10 20 30 50 0.01 0.1 0.5 3 10 30 100 V , DRAIN-SOURCE VOLTAGE (V) DS RDS(ON) LIMIT V = 10V SINGLE PULSE R =125°C/W T = 25°C GS A θJA DC 1s 10ms 100ms 10s 1ms 100us 0.01 0.1 0.5 1 10 50 100 300 0 5 10 15 20 25 30 SINGLE PULSE TIME (SEC) SINGLE PULSE R =125° C/W T = 25°C θJA A |
同様の部品番号 - FDS4410 |
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同様の説明 - FDS4410 |
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