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TC429 データシート(PDF) 10 Page - Microchip Technology |
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TC429 データシート(HTML) 10 Page - Microchip Technology |
10 / 20 page TC429 DS21416D-page 10 2002-2012 Microchip Technology Inc. The device capacitive load dissipation is: EQUATION Quiescent power dissipation depends on input signal duty cycle. A logic low input results in a low-power dissipation mode with only 0.5 mA total current drain. Logic-high signals raise the current to 5 mA maximum. The quiescent power dissipation is: EQUATION Transition power dissipation arises because the output stage N- and P-channel MOS transistors are ON simultaneously for a very short period when the output changes. The device transition power dissipation is approxi- mately: EQUATION An example shows the relative magnitude for each item. TABLE 4-1: MAXIMUM OPERATING FREQUENCIES FIGURE 4-5: Peak Output Current Capability. 4.5 POWER-ON OSCILLATION Power-on oscillations are due to trace size, layout and component placement. A ‘quick fix’ for most applica- tions that exhibit power-on oscillation problems is to place approximately 10 k in series with the input of the MOSFET driver. C = 2500 pF VS = 15V D = 50% f = 200 kHz PD = Package power dissipation: = PC + PT + PQ = 113 mW + 10 mW + 41 mW = 164 mW Maximum ambient operating temperature: = TJ – JA (PD) = 150ºC - (150ºC/W)(0.164W) = 125 C Where: TJ = Maximum allowable junction temperature (+150 C) JA = Junction-to-ambient thermal resistance (150 C/W, CERDIP) P C fCV S 2 = Where: f = Switching frequency C = Capacitive load VS = Supply voltage P Q V S DI H 1D – I L + = Where: IH = Quiescent current with input high IL = Quiescent current with input low D = Duty cycle (5 mA max) (0.5 mA max) P T fV S 3.3 10 9 – ASec = Note: Ambient operating temperature should not exceed +85ºC for EPA or EOA devices or +125ºC for MJA devices. VS fMAX 18V 500 kHz 15V 700 kHz 10V 1.3 MHz 5V >2 MHz Conditions: 1. CERDIP Package ( JA =150C/W) 2. TA = +25C 3. CL = 2500 pF Note: It is extremely important that all MOSFET driver applications be evaluated for the possibility of having high-power oscillations occur during the power-on cycle. TIME (5 μs/DIV) VS = 18V RL = 0.1Ω 5V INPUT OUTPUT 5 μs 500mV 5V/DIV 500mV/DIV (5 AMP/DIV) |
同様の部品番号 - TC429_13 |
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同様の説明 - TC429_13 |
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