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FDT459N データシート(PDF) 4 Page - Fairchild Semiconductor

部品番号 FDT459N
部品情報  N-Channel Enhancement Mode Field Effect Transistor
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メーカー  FAIRCHILD [Fairchild Semiconductor]
ホームページ  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDT459N データシート(HTML) 4 Page - Fairchild Semiconductor

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FDT459NRev.C
Figure 10. Single Pulse Maximum Power
Dissipation.
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
Figure 9. Maximum Safe Operating Area.
Typical Electrical Characteristics
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Q
, GATE CHARGE (nC)
g
V
= 5V
DS
10V
I = 6.5A
D
15V
0.1
0.2
0.5
1
2
5
10
20 30
50
0.01
0.05
0.1
0.5
1
2
5
10
20
40
V
, DRAIN-SOURCE VOLTAGE (V)
RDS(ON)
LIMIT
A
DC
DS
1s
100ms
10ms
1ms
10s
V
=10V
SINGLE PULSE
R
= See Note 1c
T
= 25°C
θJA
GS
A
100us
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
1
2
R
(t) = r(t) * R
R
= See Note 1c
T - T
= P * R
(t)
A
J
P(pk)
t1
t 2
θJA
θJA
θJA
θJA
Figure 11. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.
0.1
0.3
1
3
10
30
30
50
100
200
400
1000
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
Ciss
f = 1 MHz
V
= 0 V
GS
Coss
Crss
0.001
0.01
0.1
1
10
100
300
0
40
80
120
160
200
SINGLE PULSE TIME (SEC)
SINGLE PULSE
R
= see note 1c
T = 25°C
θJA
A


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