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FDT459N データシート(PDF) 4 Page - Fairchild Semiconductor |
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FDT459N データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 4 page FDT459NRev.C Figure 10. Single Pulse Maximum Power Dissipation. Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. Figure 9. Maximum Safe Operating Area. Typical Electrical Characteristics 0 2 4 6 8 10 12 14 0 2 4 6 8 10 Q , GATE CHARGE (nC) g V = 5V DS 10V I = 6.5A D 15V 0.1 0.2 0.5 1 2 5 10 20 30 50 0.01 0.05 0.1 0.5 1 2 5 10 20 40 V , DRAIN-SOURCE VOLTAGE (V) RDS(ON) LIMIT A DC DS 1s 100ms 10ms 1ms 10s V =10V SINGLE PULSE R = See Note 1c T = 25°C θJA GS A 100us 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 Duty Cycle, D = t / t 1 2 R (t) = r(t) * R R = See Note 1c T - T = P * R (t) A J P(pk) t1 t 2 θJA θJA θJA θJA Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. 0.1 0.3 1 3 10 30 30 50 100 200 400 1000 V , DRAIN TO SOURCE VOLTAGE (V) DS Ciss f = 1 MHz V = 0 V GS Coss Crss 0.001 0.01 0.1 1 10 100 300 0 40 80 120 160 200 SINGLE PULSE TIME (SEC) SINGLE PULSE R = see note 1c T = 25°C θJA A |
同様の部品番号 - FDT459N |
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同様の説明 - FDT459N |
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