FMB2907A datasheet(2/5 Pages) FAIRCHILD

部品番号	FMB2907A

部品情報	PNP Multi-Chip General Purpose Amplifier

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Electrical Characteristics

T

A

= 25°C unless otherwise noted

OFF CHARACTERISTICS

ON CHARACTERISTICS

SMALL SIGNAL CHARACTERISTICS

fT

Current Gain - Bandwidth Product

IC = 50 mA, VCE = 20 V,

f = 100 MHz

250

MHz

Cobo

Output Capacitance

VCB = 10 V, IE = 0,

f = 100 kHz

6.0

pF

Cibo

Input Capacitance

VEB = 2.0 V, IC = 0,

f = 100 kHz

12

pF

SWITCHING CHARACTERISTICS

ton

Turn-on Time

VCC = 30 V, IC = 150 mA,

30

ns

td

Delay Time

IB1 = 15 mA

8.0

ns

tr

Rise Time

20

ns

toff

Turn-off Time

VCC = 6.0 V, IC = 150 mA

80

ns

ts

Storage Time

IB1 = IB2 = 15 mA

60

ns

tf

Fall Time

20

ns

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Symbol

Parameter

Test Conditions

Min

Typ

Max Units

V(BR)CEO

Collector-Emitter Breakdown

Voltage*

IC = 10 mA, IB = 0

60

V

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 10

µA, IE = 0

60

V

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10

µA, IC = 0

5.0

V

IB

Base Cutoff Current

VCB = 30 V, VEB = 0.5 V

50

nA

ICEX

Collector Cutoff Current

VCE = 30 V, VBE = 0.5 V

50

nA

ICBO

Collector Cutoff Current

VCB = 50 V, IE = 0

VCB = 50 V, IE = 0, TA = 125

°C

0.02

20

µA

hFE

DC Current Gain

IC = 0.1 mA, VCE = 10 V

IC = 1.0 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V*

IC = 500 mA, VCE = 10 V*

75

100

50

300

VCE(sat)

Collector-Emitter Saturation Voltage*

IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

0.4

1.6

V

VBE(sat)

Base-Emitter Saturation Voltage

IC = 150 mA, IB = 15 mA*

IC = 500 mA, IB = 50 mA

1.3

2.6

V

PNP Multi-Chip General Purpose Amplifier

(continued)

同様の部品番号 - FMB2907A

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	FMB2907A	90Kb / 7P	PNP Multi-Chip General Purpose Amplifier

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