TPS1120, TPS1120Y

DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS

SLVS080A – MARCH 1994 – REVISED AUGUST 1995

3

POST OFFICE BOX 655303

UNIT

Drain-to-source voltage, VDS

–15

V

Gate-to-source voltage, VGS

2 or –15

V

VGS =2 7 V

TA = 25°C

±0.39

VGS = – 2.7 V

TA = 125°C

±0.21

VGS =3 V

TA = 25°C

±0.5

Continuous drain current each device (TJ = 150°C) ID

VGS = – 3 V

TA = 125°C

±0.25

A

Continuous drain current, each device (TJ = 150°C), ID

VGS =4 5 V

TA = 25°C

±0.74

A

VGS = – 4.5 V

TA = 125°C

±0.34

VGS =10 V

TA = 25°C

±1.17

VGS = – 10 V

TA = 125°C

±0.53

Pulse drain current, ID

TA = 25°C

±7

A

Continuous source current (diode conduction), IS

TA = 25°C

–1

A

Continuous total power dissipation

See Dissipation Rating Table

Storage temperature range, Tstg

– 55 to 150

°C

Operating junction temperature range, TJ

– 40 to 150

°C

Operating free-air temperature range, TA

– 40 to 125

°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

DISSIPATION RATING TABLE

PACKAGE

TA ≤ 25°C

POWER RATING

DERATING FACTOR‡

ABOVE TA = 25°C

TA = 70°C

POWER RATING

TA = 85°C

POWER RATING

TA = 125°C

POWER RATING

D

840 mW

6.71 mW/

°C

538 mW

437 mW

169 mW

‡ Maximum values are calculated using a derating factor based on RθJA = 149°C/W for the package. These devices are

mounted on an FR4 board with no special thermal considerations.