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1N4148W-GS08 データシート(PDF) 1 Page - Vishay Siliconix |
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1N4148W-GS08 データシート(HTML) 1 Page - Vishay Siliconix |
1 / 5 page 1N4148W-V www.vishay.com Vishay Semiconductors Rev. 1.5, 27-Jul-12 1 Document Number: 85748 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18/10K per 13 " reel (8 mm tape), 10K/box GS08/3K per 7 " reel (8 mm tape), 15K/box FEATURES • These diodes are also available in other case styles including the DO-35 case with the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148-V. • Silicon epitaxial planar diode • Fast switching diodes • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Valid provided that electrodes are kept at ambient temperature. PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS 1N4148W-V 1N4148W-V-GS18 or 1N4148W-V-GS08 A2 Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 75 V Repetitive peak reverse voltage VRRM 100 V Average rectified current half wave rectification with resistive load (1) f 50 Hz IF(AV) 150 mA Surge forward current t < 1 s and Tj = 25 °C IFSM 500 mA Power dissipation (1) Ptot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 375 K/W Junction temperature Tj 150 °C Storage temperature Tstg - 65 to + 150 °C |
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