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IRF9362PBF データシート(PDF) 5 Page - International Rectifier

部品番号 IRF9362PBF
部品情報  HEXFETPower MOSFET Industry-Standard SO-8 Package
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メーカー  IRF [International Rectifier]
ホームページ  http://www.irf.com
Logo IRF - International Rectifier

IRF9362PBF データシート(HTML) 5 Page - International Rectifier

  IRF9362PBF Datasheet HTML 1Page - International Rectifier IRF9362PBF Datasheet HTML 2Page - International Rectifier IRF9362PBF Datasheet HTML 3Page - International Rectifier IRF9362PBF Datasheet HTML 4Page - International Rectifier IRF9362PBF Datasheet HTML 5Page - International Rectifier IRF9362PBF Datasheet HTML 6Page - International Rectifier IRF9362PBF Datasheet HTML 7Page - International Rectifier IRF9362PBF Datasheet HTML 8Page - International Rectifier  
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IRF9362PbF
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5
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Fig 15
. Typical Power vs. Time
* Reverse Polarity of D.U.T for P-Channel
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
D.U.T
*

Fig 16.
Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
2
4
6
8
10
12
14
16
18
20
-VGS, Gate -to -Source Voltage (V)
0
10
20
30
40
50
60
ID = -8.0A
TJ = 25°C
TJ = 125°C
0
10
20
30
40
50
60
70
-ID, Drain Current (A)
0
10
20
30
40
50
60
70
80
Vgs = -4.5V
Vgs = -10V
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
ID
TOP
-1.8A
-2.6A
BOTTOM -6.4A
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
0
200
400
600
800
1000


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